Fabrication and characterization of TiSi2 /Si heteronanocrystal metal-oxide- semiconductor memories
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چکیده
TiSi2 /Si heteronanocrystals on ultrathin oxide was fabricated with self-aligned silicidation method. Compared with Si nanocrystal memory device, TiSi2 /Si heteronanocrystal metal-oxidesemiconductor memory device shows higher writing saturation level, faster writing/erasing speed, longer retention, and larger memory window. Therefore, heteronanocrystals are very promising to replace Si nanocrystals for future nonvolatile memory applications. © 2007 American Institute of Physics. DOI: 10.1063/1.2710441
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تاریخ انتشار 2007